 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| HGTG30N120D2 April 1995 30A, 1200V N-Channel IGBT Package JEDEC STYLE TO-247 EMITTER COLLECTOR GATE COLLECTOR (BOTTOM SIDE METAL) Features * 30A, 1200V * Latch Free Operation * Typical Fall Time - 580ns * High Input Impedance * Low Conduction Loss Description The HGTG30N120D2 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between +25oC and +150oC. The IGBTs are ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. PACKAGING AVAILABILITY PART NUMBER HGTG30N120D2 PACKAGE TO-247 BRAND G30N120D2 E G Terminal Diagram N-CHANNEL ENHANCEMENT MODE C Formerly Developmental Type TA49010 Absolute Maximum Ratings TC = +25oC, Unless Otherwise Specified HGTG30N120D2 1200 1200 50 30 200 20 30 200A at 0.8 BVCES 208 1.67 -55 to +150 260 6 15 UNITS V V A A A V V W W/oC oC oC S S Collector-Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . BVCES Collector-Gate Voltage, RGE =1M . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VCGR Collector Current Continuous at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 at VGE =15V at TC = +90oC . . . . . . . . . . . . . . . . . . . . IC90 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate-Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate-Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = +150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . .SSOA Power Dissipation Total at TC = +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Total Derating TC > +25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 15V . . . . . . . . . . . . . . . . . . . . . . . . . tSC at VGE = 10V . . . . . . . . . . . . . . . . . . . . . . . . . tSC NOTES: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. VCE(PEAK) = 720V, TC = +125oC, RGE = 25. HARRIS SEMICONDUCTOR IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS: 4,364,073 4,587,713 4,641,162 4,794,432 4,860,080 4,969,027 4,417,385 4,598,461 4,644,637 4,801,986 4,883,767 4,430,792 4,605,948 4,682,195 4,803,533 4,888,627 4,443,931 4,618,872 4,684,413 4,809,045 4,890,143 4,466,176 4,620,211 4,694,313 4,809,047 4,901,127 4,516,143 4,631,564 4,717,679 4,810,665 4,904,609 4,532,534 4,639,754 4,743,952 4,823,176 4,933,740 4,567,641 4,639,762 4,783,690 4,837,606 4,963,951 CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999 File Number 2834.2 3-111 Specifications HGTG30N120D2 Electrical Specifications TC = +25oC, Unless Otherwise Specified LIMITS PARAMETERS Collector-Emitter Breakdown Voltage Zero Gate Voltage Collector Current SYMBOL BVCES ICES TEST CONDITIONS IC = 250A, VGE = 0V VCE = BVCES VCE = 0.8 BVCES Collector-Emitter Saturation Voltage VCE(SAT) IC = IC90, VGE = 15V IC = IC90, VGE = 10V Gate-Emitter Threshold Voltage Gate-Emitter Leakage Current Gate-Emitter Plateau Voltage On-State Gate Charge VGE(TH) IGES VGEP QG(ON) VGE = VCE, IC = 1mA VGE = 20V IC = IC90, VCE = 0.5 BVCES IC = IC90, VCE = 0.5 BVCES VGE = 15V VGE = 20V TC = TC = TC = TC = +25oC +125oC +25oC +125oC MIN 1200 3.0 L = 50H, IC = IC90, RG = 25, VGE = 10V, TJ = +125oC, VCE = 0.8 BVCES TYP 3.0 3.2 3.2 3.4 4.5 7.3 185 240 100 150 760 580 8.4 100 150 610 580 8.4 0.5 MAX 1.0 4.0 3.5 3.5 3.8 3.8 6.0 500 240 315 990 750 790 750 0.6 UNITS V mA mA V V V V V nA V nC nC ns ns ns ns mJ ns ns ns ns mJ oC/W TC = +25oC TC = +125oC TC = +25oC Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time Current Fall Time Turn-Off Energy (Note 1) Thermal Resistance Junction-to-Case tD(ON)I tRI tD(OFF)I tFI WOFF tD(ON)I tRI tD(OFF)I tFI WOFF RJC L = 50H, IC = IC90, RG = 25, VGE = 15V, TJ = +125oC, VCE = 0.8 BVCES NOTE: 1. Turn-Off Energy Loss (WOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A) The HGTG20N100D2 was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Typical Performance Curves 100 ICE, COLLECTOR-EMITTER CURRENT (A) ICE, COLLECTOR-EMITTER CURRENT (A) 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 10 VGE, GATE-TO-EMITTER VOLTAGE (V) TC = +25oC TC = -40oC TC = +150oC PULSE DURATION = 250s DUTY CYCLE < 0.5%, VCE = 10V 100 90 80 70 60 50 40 30 20 10 0 0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 10 VGE = 6.5V VGE = 6.0V VGE = 7.0V VGE = 7.5V VGE = 8V PULSE DURATION = 250s DUTY CYCLE < 0.5%, TC = +25oC VGE = 15V VGE = 10V FIGURE 1. TRANSFER CHARACTERISTICS (TYPICAL) FIGURE 2. SATURATION CHARACTERISTICS (TYPICAL) 3-112 HGTG30N120D2 Typical Performance Curves (Continued) 50 ICE, DC COLLECTOR CURRENT (A) VGE = 15V 2.0 VGE =10V AND 15V, TJ = +150oC, RG = 25, L = 50H 1.5 30 VGE = 10V tFI , FALL TIME (s) VCE = 480V 40 1.0 VCE = 960V 20 10 0.5 0 +25 +50 +75 +100 +125 +150 TC , CASE TEMPERATURE (oC) 0.0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 FIGURE 3. DC COLLECTOR CURRENT vs CASE TEMPERATURE 10000 f = 1MHz 8000 CISS 6000 FIGURE 4. FALL TIME vs COLLECTOR-EMITTER CURRENT 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) VCC = BVCES 750 GATEEMITTER VOLTAGE VCC = BVCES 500 0.75 BVCES 0.75 BVCES 0.50 BVCES 0.50 BVCES 0.25 BVCES 0.25 BVCES 250 COLLECTOR-EMITTER VOLTAGE 0 20 IG(REF) IG(ACT) TIME (s) 80 IG(REF) IG(ACT) 5 RL = 29 IG(REF) = 1.8mA VGE = 10V 10 VGE, GATE-EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 4000 COSS 2000 CRSS 0 0 5 10 15 20 25 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) 0 FIGURE 5. CAPACITANCE vs COLLECTOR-EMITTER VOLTAGE FIGURE 6. NORMALIZED SWITCHING WAVEFORMS AT CONSTANT GATE CURRENT (REFER TO APPLICATION NOTES AN7254 AND AN7260) 100 TJ = +150oC, RG = 25, L = 50H 8 7 VCE(ON), SATURATION VOLTAGE (V) 6 5 4 3 2 1 0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 VGE = 15V TJ = +150oC VGE = 10V WOFF , TURN-OFF SWITCHING LOSS (mJ) 10 VCE = 960V, VGE = 10V, 15V 1.0 VCE = 480V, VGE = 10V, 15V 0.1 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 FIGURE 7. SATURATION VOLTAGE vs COLLECTOR-EMITTER CURRENT FIGURE 8. TURN-OFF SWITCHING LOSS vs COLLECTOREMITTER CURRENT 3-113 HGTG30N120D2 Typical Performance Curves (Continued) 2.0 fOP , OPERATING FREQUENCY (kHz) VGE = 15V, RG = 50 VGE = 10V, RG = 50 tD(OFF)I , TURN-OFF DELAY (s) VGE = 15V, RG = 25 1.5 VGE = 10V, RG = 25 100 VCE = 480V 1.0 10 fMAX1 = 0.05/tD(OFF)I fMAX2 = (PD - PC)/WOFF PC = DUTY FACTOR = 50% RJC = 0.5oC/W VCE = 960V 0.5 TJ = +150oC VCE = 960V L = 50H 1 1 TJ = +150oC, TC = +75oC, VGE = 15V RG = 25, L = 50H 10 ICE, COLLECTOR-EMITTER CURRENT (A) PC = CONDUCTION DISSIPATION 70 0.0 1 10 ICE, COLLECTOR-EMITTER CURRENT (A) 100 NOTE: PD = ALLOWABLE DISSIPATION FIGURE 9. TURN-OFF DELAY vs COLLECTOR-EMITTER CURRENT 100 ICE, COLLECTOR-EMITTER CURRENT (A) VGE = 10V FIGURE 10. OPERATING FREQUENCY vs COLLECTOREMITTER CURRENT AND VOLTAGE 10 TJ = +150oC TJ = +25oC 1 0 1 2 3 4 5 6 7 8 VCE(ON), SATURATION VOLTAGE (V) FIGURE 11. COLLECTOR-EMITTER SATURATION VOLTAGE Test Circuit L = 25H 1/RG = 1/RGEN + 1/RGE RGEN = 50 VCC 960V + - 20V 0V RGE = 50 FIGURE 12. INDUCTIVE SWITCHING TEST CIRCUIT 3-114 HGTG30N120D2 Operating Frequency Information Operating frequency information for a typical device (Figure 10) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 7, 8 and 9. The operating frequency plot (Figure 10) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05/tD(OFF)I. tD(OFF)I deadtime (the denominator) has been arbitrarily held to 10% of the onstate time for a 50% duty factor. Other definitions are possible. tD(OFF)I is defined as the time between the 90% point of the trailing edge of the input pulse and the point where the collector current falls to 90% of its maximum value. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJMAX. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/WOFF. The allowable dissipation (PD) is defined by PD = (TJMAX - TC)/RJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 10) and the conduction losses (PC) are approximated by PC = (VCE * ICE)/2. WOFF is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). The switching power loss (Figure 10) is defined as fMAX2 * WOFF. Turn-on switching losses are not included because they can be greatly influenced by external circuit conditions and components. All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com Sales Office Headquarters NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029 3-115 |
Price & Availability of HGTG30N120CN
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |